Abstract: Wide Bandgap (WBG) devices like Gallium Nitride (GaN) and Silicon Carbide (SiC) enhance power density in medium and high voltage applications due to their fast-switching speeds. Wire ...
Abstract: In order to construct a design that exhibits variation immunity, the impacts of line-edge roughness (LER) of nanowires (NWs) in stacked-nanowire FETs (stacked-NW FETs) are investigated using ...
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